EMP19K03HPCS - Excelliance MOS

EMP19K03HPCS N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 5.7mΩ 2.2mΩ ID 48A 90A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMP19K03HPCS LIMITS UNIT Q1.

Features

Rated VDS=30V N-CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM W °C UNIT Junction-to-Case RJC Steady State 5.8 3.1 Junction-to-Ambient RJA Steady State RJA t ≦ 10 s 65 65 °C / W 40 40 2019/3/24 p.1 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ RJA when mounted on a 1 in2 pad of 2 oz copper. EMP19K03HPCS ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Q1 30 V Q2 30 .