EMP37N03H - Excelliance MOS

EMP37N03H N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.7mΩ ID 78A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMP37N03H ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current TC = 2.

Features

5/8 UNIT V A mJ W °C UNIT °C / W p.1 350°C / W when mounted on a 1 in2 pad of 2 oz copper. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMP37N03H LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = .