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N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 9.0mΩ 13.5mΩ 44A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1.
r. 4Guarantee by Engineering test 2020/3/2 A.2 LIMITS ±20 44 12 44 127 28 39.2 19.6 83.3 33.3 2.3 0.9 -55 to 150 MAXIMUM 1.5 55 UNIT V A mJ W W ℃ UNIT °C / W P.1 EMB09N03V ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 30 VDS = VGS, ID = 250uA 1.2 VDS = 0V, VGS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMB09N03A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMB09N03G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMB09N03H |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB09N03HR |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMB09N03VAT |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | EMB09A03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | EMB09A03VP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 8 | EMB09A3HP |
Excelliance MOS |
MOSFET |
|
| 9 | EMB09K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 10 | EMB09K03VP |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 11 | EMB09P03A |
Excelliance MOS |
MOSFET |
|
| 12 | EMB09P03H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|