N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V D2 / S1 RDSON (MAX.) 9.5mΩ 9.5mΩ ID 15A 15A D1 EMB09A3HP UIS, Rg 100% Tested D1 D1 D1 PIN 1 (G1) Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS.
m junction temperature. 2Duty cycle 1% RJA when mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 2.6 1.8 62 60 27 25 UNIT °C / W 2013/11/21 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain‐Source Breakdown Voltage V(BR)DSS STATIC VGS = 0V, ID = 250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 Input Capacitance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMB09A03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | EMB09A03VP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | EMB09K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | EMB09K03VP |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | EMB09N03A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | EMB09N03G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | EMB09N03H |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | EMB09N03HR |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | EMB09N03V |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
10 | EMB09N03VAT |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | EMB09P03A |
Excelliance MOS |
MOSFET | |
12 | EMB09P03H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |