EMB09A03VP - Excelliance MOS

EMB09A03VP N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 VDSS 30V 30V RDSON (MAX.) 9mΩ 9mΩ ID 16A 16A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Dr.

Features

12.8 6.4 6.4 25 25 10 10 -55 to 150 UNIT V A mJ W °C MAXIMUM 5 5 90 90 50 50 UNIT °C / W 2019/03/01 p.1 EMB09A03VP ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Q1 30 V Q2 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Q1 1.2 1.8 2.5 Q2 1.2 1.8 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q1 ±100 nA Q2 ±100 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Q1 1 A Q2 1 VDS = 20V, VG.