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Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 20.0mΩ 9.0mΩ 30.0mΩ 15.0mΩ ID @TC=25℃ 32.0A 49.0A ID @TA=25℃ 8.0A 13.0A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Dr.
A mJ W W °C ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 390°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2021/8/10 A.1 MAXIMUM Q1 Q2 3.5 3.5 50 50 90 90 UNIT °C/W P.1 EMB09K03VP ▪Q1_ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EMB09K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMB09A03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMB09A03VP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB09A3HP |
Excelliance MOS |
MOSFET |
|
| 5 | EMB09N03A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | EMB09N03G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | EMB09N03H |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 8 | EMB09N03HR |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 9 | EMB09N03V |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 10 | EMB09N03VAT |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 11 | EMB09P03A |
Excelliance MOS |
MOSFET |
|
| 12 | EMB09P03H |
Excelliance MOS |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|