EM42BM3284LBA - Eorex

EM42BM3284LBA Double DATA RATE SDRAM

The EM42BM3284LBA is Double-Date-Rate Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 8Meg words x 4 banks by 32 bits. The 1Gb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally pre-fetches multiple bits and It transfers the data for.

Features

• Internal Double-Date-Rate architecture with 2 Accesses per clock cycle.
• 1.8V ±0.1V VDD/VDDQ
• 1.8V LV-COMS compatible I/O
• Burst Length (B/L) of 2, 4, 8, 16
• 3 Clock read latency
• Bi-directional,intermittent data strobe(DQS)
• All inputs except data and DM are sampled at the positive edge of the system clock.
• Data Mask (DM) for write data
• Sequential & Interleaved Burst type available
• Auto Precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• No DLL ;CK to DQS is not synchronized
• Deep power down mod.