EM42BM3284LBA |
Part Number | EM42BM3284LBA |
Manufacturer | Eorex |
Description | The EM42BM3284LBA is Double-Date-Rate Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 8Meg words x 4 banks by 32 bits. The 1Gb DDR... |
Features |
• Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. • 1.8V ±0.1V VDD/VDDQ • 1.8V LV-COMS compatible I/O • Burst Length (B/L) of 2, 4, 8, 16 • 3 Clock read latency • Bi-directional,intermittent data strobe(DQS) • All inputs except data and DM are sampled at the positive edge of the system clock. • Data Mask (DM) for write data • Sequential & Interleaved Burst type available • Auto Precharge option for each burst accesses • DQS edge-aligned with data for Read cycles • DQS center-aligned with data for Write cycles • No DLL ;CK to DQS is not synchronized • Deep power down mod... |
Document |
EM42BM3284LBA Data Sheet
PDF 352.86KB |
Distributor | Stock | Price | Buy |
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