• Internal Double-Date-Rate architecture with twice accesses per clock cycle. • Single 2.5V ±0.2V Power Supply • 2.5V SSTL-2 compatible I/O • Burst Length (B/L) of 2, 4, 8 • CAS Latency: 3 • Bi-directional data strobe (DQS) for input and output data, active by both edges • Data Mask (DM) for write data • Sequential & Interleaved Burst type available • Auto .
Description
• Internal Double-Date-Rate architecture with twice accesses per clock cycle.
• Single 2.5V ±0.2V Power Supply
• 2.5V SSTL-2 compatible I/O
• Burst Length (B/L) of 2, 4, 8
• CAS Latency: 3
• Bi-directional data strobe (DQS) for input and
output data, active by both edges
• Data Mask (DM) for write data
• Sequential & Interleaved Burst type available
• Auto precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• DLL aligns DQ & DQS transitions with CLK transition
• Auto Refresh and Self Refresh
• 8,192.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EM4200 |
EM Microelectronic |
128-bit Read Only Low Frequency Contactless Identification | |
2 | EM4222 |
EM Microelectronic |
Read-Only UHF Identification | |
3 | EM4223 |
EM Microelectronic |
Read-only UHF Radio Frequency Identification | |
4 | EM4233SLIC |
EM Microelectronic |
Long range passive CMOS | |
5 | EM4269 |
EM Microelectronic |
512 bit Read/Write Contactless Identification | |
6 | EM428M1644RTA |
Eorex |
Double DATA RATE SDRAM | |
7 | EM42AM1684RTC |
Eorex |
Double DATA RATE SDRAM | |
8 | EM42BM3284LBA |
Eorex |
Double DATA RATE SDRAM | |
9 | EM42GT |
EUROQUARTZ limited |
TCXO | |
10 | EM4 |
ETC |
Electronic Indicator | |
11 | EM4 |
ETC |
Tube | |
12 | EM4 |
Philips |
Tuning Indicator |