E13007F2 - Fairchild Semiconductor

E13007F2 NPN Silicon Transistor

KSE13007F KSE13007F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector- Base Voltage Collector- Emitter Vo.

Features

0µs, Duty Cycle≤2% IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 5A IB1 = - IB2 = 1A RL = 50Ω Min. 400 8 5 4 Typ. 110 Max. 1 60 30 1 2 3 1.2 1.6 1.6 3 0.7 Units V mA V V V V V pF MHz µs µs µs ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 Typical Characteristics 100 VCE = 5V 10 hFE, DC CURRENT GAIN 1 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain 1000 Cob[pF], CAPACITANCE 100 1.