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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. E13005SDL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc 2．FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Ch.
Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | E13005 |
Daesan Electronics |
POWER TRANSISTOR |
|
| 2 | E13005 |
Fairchild Semiconductor |
KSE13005 |
|
| 3 | E13005-250 |
Thinki Semiconductor |
(MJE13005 Series) Silicon NPN Power Transistor |
|
| 4 | E1300 |
CSF |
Triode |
|
| 5 | E13001 |
DEC |
POWER TRANSISTOR |
|
| 6 | E13002 |
DEC |
POWER TRANSISTOR |
|
| 7 | E13003 |
Daesan Electronics |
POWER TRANSISTOR |
|
| 8 | E13006 |
Fairchild Semiconductor |
NPN Silicon Transistor |
|
| 9 | E13007 |
ON Semiconductor |
NPN Bipolar Power Transistor |
|
| 10 | E13007 |
Fairchild Semiconductor |
NPN Silicon Transistor |
|
| 11 | E13007-2 |
San Pu |
High Voltage Power Transistor |
|
| 12 | E13007F |
Fairchild Semiconductor |
NPN Silicon Transistor |
|