KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : KSE13006 : KSE13007 VCEO Collector-Emitte.
itance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2%
VEB = 9V, IC = 0
VCE = 5V, IC = 2A VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A
IC = 2A, IB = 0.4A IC = 5A, IB = 1A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω
Min. Typ. Max. Units
300 V 400 V
1 mA 8 60 5 30
1V 2V 3V 1.2 V 1.6 V 110 pF 4 MHz 1.6 µs 3 µs 0.7 µs
©2000 Fairchild Semiconductor International
Rev. A1, December 2000
Typical Characteristics
100
V = 5V CE
10
hFE, DC CURRENT GAIN
.
MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | E1300 |
CSF |
Triode | |
2 | E13001 |
DEC |
POWER TRANSISTOR | |
3 | E13002 |
DEC |
POWER TRANSISTOR | |
4 | E13003 |
Daesan Electronics |
POWER TRANSISTOR | |
5 | E13005 |
Daesan Electronics |
POWER TRANSISTOR | |
6 | E13005 |
Fairchild Semiconductor |
KSE13005 | |
7 | E13005-250 |
Thinki Semiconductor |
(MJE13005 Series) Silicon NPN Power Transistor | |
8 | E13005SDL |
Jingdao |
Bipolar Junction Transistor | |
9 | E13006 |
Fairchild Semiconductor |
NPN Silicon Transistor | |
10 | E13007-2 |
San Pu |
High Voltage Power Transistor | |
11 | E13007F |
Fairchild Semiconductor |
NPN Silicon Transistor | |
12 | E13007F2 |
Fairchild Semiconductor |
NPN Silicon Transistor |