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Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. E Absolute Maximum Ratings ( Ta = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature l VCBO VCEO VEBO IC .
— 4 2.0 Typ. — — — — — — — 3.0 Max. 10 10 — 30 1.0 1.5 — 4.0 V V MHz us Unit uA uA V ICBO IEBO VCEO hFE VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS VCE=10V, IC=0.5A IB1=-IB2=0.5A, Page 1/1 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | E13005 |
Daesan Electronics |
POWER TRANSISTOR |
|
| 2 | E13005 |
Fairchild Semiconductor |
KSE13005 |
|
| 3 | E13005SDL |
Jingdao |
Bipolar Junction Transistor |
|
| 4 | E1300 |
CSF |
Triode |
|
| 5 | E13001 |
DEC |
POWER TRANSISTOR |
|
| 6 | E13002 |
DEC |
POWER TRANSISTOR |
|
| 7 | E13003 |
Daesan Electronics |
POWER TRANSISTOR |
|
| 8 | E13006 |
Fairchild Semiconductor |
NPN Silicon Transistor |
|
| 9 | E13007 |
ON Semiconductor |
NPN Bipolar Power Transistor |
|
| 10 | E13007 |
Fairchild Semiconductor |
NPN Silicon Transistor |
|
| 11 | E13007-2 |
San Pu |
High Voltage Power Transistor |
|
| 12 | E13007F |
Fairchild Semiconductor |
NPN Silicon Transistor |
|