DS28E80 - Maxim Integrated

DS28E80 Gamma Radiation Resistant 1-Wire Memory

The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. Th.

Features

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● High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization
• Resistant Up to 75kGy (kiloGray) of Gamma Radiation
• Reprogrammable 248 Bytes of User Memory
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● Lower Block Size Provides Greater Flexibility in Programming User Memory
• Memory is Organized as 8-Byte Blocks
• Each Block Can Be Written 8 Times
• User-Programmable Write Protection for Individual Memory Blocks
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● Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact
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● Compact Package and Single IO Interface Reduces Board Space and Enhances Reliability
• Unique .