DRV5012 - Texas Instruments

DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor

The DRV5012 device is an ultra-low-power digitallatch Hall effect sensor with a pin-selectable sampling rate. When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high.

Features

•1 Industry-Leading Low-Power Consumption
• Pin-Selectable Sampling Rate:
  – SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
  – SEL = High: 2.5 kHz Using 142 µA (1.8 V)
• 1.65- to 5.5-V Operating VCC Range
• High Magnetic Sensitivity: ±2 mT (Typical)
• Robust Hysteresis: 4 mT (Typical)
• Push-Pull CMOS Output
• Small and Thin X2SON Package
•
  –40°C to +85°C Operating Temperature Range 2 Applications
• Brushless DC Motor Sensors
• Incremental Rotary Encoding:
  – Motor Speed
  – Mechanical Travel
  – Fluid Measurement
  – Knob Turning
  – Wheel Speed
• Portable Medical Devices
• E-Locks, E-Bikes, Motorized Blinds
• F.