DMN32D0LV - DIODES

DMN32D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low I.

Features

 Dual N-Channel MOSFET
 Low On-Resistance
 Very Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Ultra-Small Surface Mount Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/au.