DMN3008SFGQ - Diodes

DMN3008SFGQ N-CHANNEL MOSFET

and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Low RDS(ON) – Ensures on-state losses are minimized  Small, form factor thermally efficient package enables higher density end products  Occupies only 33% of the board area occu.

Features

BVDSS 30V RDS(ON) max 4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID max TC = +25°C 62A 56A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
 Low RDS(ON)
  – Ensures on-state losses are minimized
 Small, form factor thermally efficient package enables higher density end products
 Occupies only 33% of the board area occupied by SO-8 enabling smaller end products
 100% Unclamped Inductive Switch (UIS) Test in Production
 Totally Lead-Free & Fully RoHS Comp.