This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits Low RDS(ON) – Ensures On-State Losses are Minimized Small, Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies o.
Low RDS(ON)
– Ensures On-State Losses are Minimized
Small, Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies only 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Products
100% Unclamped Inductive Switch (UIS) Test in Production
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI®3333-8
Case Material: Molded Plastic, "G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMN3008SFGQ |
Diodes |
N-CHANNEL MOSFET | |
2 | DMN3005LK3 |
Diodes |
N-Channel MOSFET | |
3 | DMN3007LSS |
Diodes Incorporated |
Single N-channel MOSFET | |
4 | DMN3009LFV |
DIODES |
30V N-CHANNEL MOSFET | |
5 | DMN3009LFVQ |
DIODES |
30V N-CHANNEL MOSFET | |
6 | DMN3009LFVW |
DIODES |
30V N-CHANNEL MOSFET | |
7 | DMN3009LFVWQ |
DIODES |
30V N-CHANNEL MOSFET | |
8 | DMN3009SFG |
Diodes |
N-CHANNEL MOSFET | |
9 | DMN3009SFGQ |
DIODES |
N-CHANNEL MOSFET | |
10 | DMN3009SK3 |
Diodes |
30V N-CHANNEL MOSFET | |
11 | DMN3009SK3 |
INCHANGE |
N-Channel MOSFET | |
12 | DMN3009SSS |
DIODES |
30V N-CHANNEL MOSFET |