DMN3200U - Diodes

DMN3200U N-Channel MOSFET

DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • Low On-Resistance • 90 mΩ @ VGS = 4.5V • 110 mΩ @ VGS = 2.5V • 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "G.

Features

• Low On-Resistance
• 90 mΩ @ VGS = 4.5V
• 110 mΩ @ VGS = 2.5V
• 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 5) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
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• Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.