DMBT5551 - Dc Components

DMBT5551 PNP Transistor

Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipa.

Features

itter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 180 160 6 80 80 30 100 2% Typ - Max 50 50 0.15 0.2 1 1 250 300 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=1mA, VCE=5V IC=10mA, VCE=5V IC=50mA, VCE=5V IC=10mA, VCE=10V, f=100MHz VCB=10V, f=1MHz VCE(sat)1 VCE(sat)2 VBE(sat.