DMBT5401 - Dc Components

DMBT5401 PNP Transistor

Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipa.

Features

e Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min -160 -150 -5 50 60 50 100 2% Typ - Max -50 -0.2 -0.5 -1 -1 240 300 6 Unit V V V nA V V V V MHz pF Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-120V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V IC=-50mA, VCE=-5V IC=-10mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sa.