DMBT5087 - Dc Components

DMBT5087 PNP Transistor

Designed for low noise, high gain, general purpose amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipat.

Features

itter-Base Breakdown Volatge Collector Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO1 ICBO2 VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT Cob 380µs, Duty Cycle Min -50 -50 -3 250 250 250 40 2% Typ - Max -10 -50 -0.3 -0.85 800 4 Unit V V V nA nA V V MHz pF Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-10V VCB=-35V IC=-10mA, IB=-1mA IC=-10mA, IB=-1mA IC=-0.1mA, VCE=-5V IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V IC=-0.5mA, VCE=-5V, f=100MHz VCB=-5V, f=100MHz Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Curren.