D2294UK - Seme LAB

D2294UK METAL GATE RF SILICON FET

TetraFET D2294UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 11 dB MINIMUM SOT 171 PIN 1 PIN 3 PIN 5 SOURCE GATE SOURCE PIN 2 PIN 4 .

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 11 dB MINIMUM SOT 171 PIN 1 PIN 3 PIN 5 SOURCE GATE SOURCE PIN 2 PIN 4 PIN 6 SOURCE DRAIN SOURCE APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain
  – Source Breakdown Voltage Gate
  – Source Breakdown Voltage Drain Current
* Storage Temperature Maximum Operating Junction Temperature 50W 40V ±20V 12A
  –65 to 150°C 200°C Semelab plc. T.