D2290UK - Seme LAB

D2290UK METAL GATE RF SILICON FET

TetraFET D2290UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Top View E 4 3 1 F B DC 2 A KL J G H I SOT143 PACKAGE PIN 1 – DRAIN PIN 2 – SOURCE PIN 3 – GATE PIN 4 – SOURCE 'LP $ % & ' ( ) * + , . / PP PLQ PD[         %6& %6&         .

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain
  – Source Breakdown Voltage Gate
  – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1W 40V ±20V 2A
  –65 to 125°C 150°C Document Number 3890 Issue 3 D2290UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless other.