TetraFET D2204UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D (2 pls) C E B 1 2 3 A G 5 4 H I PIN 1 PIN 3 PIN 5 FM K DT SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN JN GATE SOURCE (COMMON) DIM mm A 6.35 DIA B 3.17 DIA C 18.41 D 5.46 E 5.21 F 7.62 G 21.59 H 3.94 I 12.70 J 0.13 K 24.76 M 2.59 N 4.06 .
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
– 10 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
70W
BVDSS
Drain
– Source Breakdown Voltage
40V
BVGSS
Gate
– Source Breakdown Voltage
±20V
ID(sat)
Drain Current
16A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2204 |
Toshiba Semiconductor |
2SD2204 | |
2 | D2200 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | D2200N |
Infineon |
Rectifier Diode | |
4 | D2201 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | D2201N |
Infineon |
Crow Bar Diode | |
6 | D2201UK |
Seme LAB |
METAL GATE RF SILICON FET | |
7 | D2202 |
Sanyo |
2SD2202 | |
8 | D2202UK |
Seme LAB |
METAL GATE RF SILICON FET | |
9 | D2203UK |
Seme LAB |
METAL GATE RF SILICON FET | |
10 | D2205UK |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | D2206 |
Toshiba |
2SD2206 | |
12 | D2208UK |
Seme LAB |
METAL GATE RF SILICON FET |