TetraFET D2203UK MECHANICAL DATA AD B H C 23 G 1 E 54 F ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL I PIN 1 PIN 3 PIN 5 NM O JK DQ SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° .
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
– 10 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
35W
BVDSS
Drain
– Source Breakdown Voltage
*
40V
BVGSS
Gate
– Source Breakdown Voltage
*
±20V
ID(sat)
Drain Current
*
2A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab Plc reserves the right to change test conditions, parameter lim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2200 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | D2200N |
Infineon |
Rectifier Diode | |
3 | D2201 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | D2201N |
Infineon |
Crow Bar Diode | |
5 | D2201UK |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | D2202 |
Sanyo |
2SD2202 | |
7 | D2202UK |
Seme LAB |
METAL GATE RF SILICON FET | |
8 | D2204 |
Toshiba Semiconductor |
2SD2204 | |
9 | D2204UK |
Seme LAB |
METAL GATE RF SILICON FET | |
10 | D2205UK |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | D2206 |
Toshiba |
2SD2206 | |
12 | D2208UK |
Seme LAB |
METAL GATE RF SILICON FET |