TetraFET SEME LAB D2208UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B (2 pls) E A C2 3 1 5 4 G (4 pls) F K D PIN 1 PIN 3 PIN 5 HJ I DK SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 PIN 4 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 4.82 I 24.76 J 1.52 K 0.81R M 0.13 N 2.16 Tol..
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
– 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
134W
BVDSS
Drain
– Source Breakdown Voltage
*
40V
BVGSS
Gate
– Source Breakdown Voltage
*
±20V
ID(sat)
Drain Current
*
16A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab Plc reserves the right to change test conditions, paramete.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2200 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | D2200N |
Infineon |
Rectifier Diode | |
3 | D2201 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | D2201N |
Infineon |
Crow Bar Diode | |
5 | D2201UK |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | D2202 |
Sanyo |
2SD2202 | |
7 | D2202UK |
Seme LAB |
METAL GATE RF SILICON FET | |
8 | D2203UK |
Seme LAB |
METAL GATE RF SILICON FET | |
9 | D2204 |
Toshiba Semiconductor |
2SD2204 | |
10 | D2204UK |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | D2205UK |
Seme LAB |
METAL GATE RF SILICON FET | |
12 | D2206 |
Toshiba |
2SD2206 |