TetraFET D2205UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GATE E KG DP PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. Inches Tol. 0.25 0.650 0.010 0.13 0.250 0.005 5.
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
– 10 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1 MHz to 1GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
35W
BVDSS
Drain
– Source Breakdown Voltage
40V
BVGSS
Gate
– Source Breakdown Voltage
±20V
ID(sat)
Drain Current
6A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2200 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | D2200N |
Infineon |
Rectifier Diode | |
3 | D2201 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | D2201N |
Infineon |
Crow Bar Diode | |
5 | D2201UK |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | D2202 |
Sanyo |
2SD2202 | |
7 | D2202UK |
Seme LAB |
METAL GATE RF SILICON FET | |
8 | D2203UK |
Seme LAB |
METAL GATE RF SILICON FET | |
9 | D2204 |
Toshiba Semiconductor |
2SD2204 | |
10 | D2204UK |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | D2206 |
Toshiba |
2SD2206 | |
12 | D2208UK |
Seme LAB |
METAL GATE RF SILICON FET |