CTH1804PS-T52 - CT Micro

CTH1804PS-T52 P-Channel MOSFET

The CTH1804PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications  Load Switch  DC/DC Converter  LCD Display inverter Package Outline Schematic Drain Gate Source Drain Ga.

Features

 Drain-Source Breakdown Voltage VDSS-40V
 Drain-Source On-Resistance RDS(ON) 35m, at VGS= -10V, ID= -12A RDS(ON) 57m, at VGS= -4.5V, ID= -6A
 Continuous Drain Current at TC=25℃ID =-18.6A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free Description The CTH1804PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications
 Load Switch
 DC/DC Converter
 LCD Display inverter Package Outl.