CTH11055NS - CT Micro

CTH11055NS N-Channel MOSFET

These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON). The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode. Applications  Switching Applications  Motor Drivers  Relay Drivers Package Outline Schematic.

Features

 Drain-Source Breakdown Voltage VDSS 55V
 Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A
 Continuous Drain Current at TC=25℃ID =110A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free Description These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON). The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode. Applications
 Switching Applications
 Motor Drivers
 Relay Drivers Package Outline Schemat.