CTH10003NS-T52 - CT Micro

CTH10003NS-T52 N-Channel MOSFET

The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance Applications  DC/DC converters  Motor Drivers  Power Management Package Outline Schematic Drain Gate Source Drain Gate .

Features

 Drain-Source Breakdown Voltage VDSS 30V
 Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A
 Continuous Drain Current at TC=25℃ID =100A
 Advanced high cell density Trench Technology
 RoHS Compliance & Halogen Free Description The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance Applications
 DC/DC converters
 Motor Drivers
 Power Management Package Outline S.