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CTH10003NS-T52 |
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| Part Number | CTH10003NS-T52 |
| Manufacturer | CT Micro |
| Description | The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored t... |
| Features |
Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A Continuous Drain Current at TC=25℃ID =100A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance Applications DC/DC converters Motor Drivers Power Management Package Outline S... |
| Document |
 CTH10003NS-T52 Data Sheet
PDF 1.00MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CTH11055NS |
CT Micro |
N-Channel MOSFET |
|
| 2 | CTH1606NS-T52 |
CT Micro |
N-Channel MOSFET |
|
| 3 | CTH1706PS-T52 |
CT Micro |
P-Channel MOSFET |
|
| 4 | CTH1804PS-T52 |
CT Micro |
P-Channel MOSFET |
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| 5 | CTH214 |
CT Micro |
Phototransistor Optocoupler |
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