CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 800 3 75 4.0 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS3N80A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS3N80A4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS3N80ARH |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS3N80FA9 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
5 | CS3N20ATH |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
6 | CS3N25 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
7 | CS3N40A23 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
8 | CS3N40A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
9 | CS3N40A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS3N50B3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
11 | CS3N50B3HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
12 | CS3N50B4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |