CS3N20ATH - Huajing Microelectronics

CS3N20ATH Silicon N-Channel Power MOSFET

CS3N20 ATH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package.

Features

l Fast Switching 200 3 2.5 1.2 l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Ga.