CS3N50B3HY - Huajing Microelectronics

CS3N50B3HY Silicon N-Channel Power MOSFET

VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 2.4 Ω switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

Features

l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Curren.