VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.
l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of LCD Power and adaptor. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS3N40A23 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS3N40A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS3N20ATH |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS3N25 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
5 | CS3N50B3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
6 | CS3N50B3HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS3N50B4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
8 | CS3N50B4HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
9 | CS3N60A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS3N65A4H-G |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
11 | CS3N70A3H-G |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
12 | CS3N80A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |