CS3N50B3HY |
Part Number | CS3N50B3HY |
Manufacturer | Huajing Microelectronics |
Description | VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ ... |
Features |
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of electron ballast and adaptor.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Curren... |
Document |
CS3N50B3HY Data Sheet
PDF 200.99KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS3N50B3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS3N50B4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS3N50B4HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS3N20ATH |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS3N25 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |