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CS3N20ATH |
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| Part Number | CS3N20ATH |
| Manufacturer | Huajing Microelectronics |
| Description | CS3N20 ATH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance... |
| Features |
l Fast Switching
200 3 2.5 1.2
l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Ga... |
| Document |
 CS3N20ATH Data Sheet
PDF 386.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS3N25 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 2 | CS3N40A23 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS3N40A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 4 | CS3N40A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS3N50B3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|