The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the a.
• Short circuit rated ultrafast: Optimized for high
speed > 5.0 kHz, and short circuit rated to 10 μs
at 125 °C, VGE = 15 V
RoHS
• Fully isolated printed circuit board mount COMPLIANT
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules.
The IGBT technology is the key to International Rectifier's advanced line of IMS (Isolated Metal Substrate) Power Module.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPV364M4K |
International Rectifier |
IGBT SIP MODULE | |
2 | CPV364M4F |
International Rectifier |
IGBT SIP MODULE | |
3 | CPV364M4FPbF |
Vishay |
Fast IGBT | |
4 | CPV364M4U |
International Rectifier |
IGBT SIP MODULE | |
5 | CPV364M4UPbF |
Vishay |
Fast IGBT | |
6 | CPV364MF |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
7 | CPV364MK |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT | |
8 | CPV364MU |
International Rectifier |
IGBT SIP MODULE Ultra-Fast IGBT | |
9 | CPV362M4F |
International Rectifier |
IGBT SIP MODULE | |
10 | CPV362M4FPbF |
Vishay |
Fast IGBT | |
11 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE | |
12 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE |