The IGBT technology is the key to the advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system .
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for medium speed 1 to 10 kHz See fig. 1 for current vs. frequency curve
RoHS
COMPLIANT
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPV362M4F |
International Rectifier |
IGBT SIP MODULE | |
2 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE | |
3 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE | |
4 | CPV362M4UPbF |
Vishay |
Fast IGBT | |
5 | CPV362MF |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
6 | CPV362MK |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT | |
7 | CPV362MM |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated Fast IGBT | |
8 | CPV362MU |
International Rectifier |
IGBT SIP MODULE Ultra-Fast IGBT | |
9 | CPV363 |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
10 | CPV363M4F |
International Rectifier |
IGBT SIP MODULE | |
11 | CPV363M4FPbF |
International Rectifier |
IGBT | |
12 | CPV363M4K |
International Rectifier |
IGBT SIP MODULE |