The IGBT technology is the key to Vishay‘s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the a.
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
IRMS per phase (4.6 kW total) with TC = 90 °C TJ
Supply voltage
Power factor
18 ARMS 125 °C 360 VDC
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical) at IC = 15 A, 25 °C
Package
1.35 V SIP
Circuit
Three Phase Inverter
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
RoHS
COMPLIANT
• Optimized for medium speed 1 to 10 kHz See fig. 1 for current vs. frequency curve
• UL approved file E78996
• Designed and qualifie.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPV364M4F |
International Rectifier |
IGBT SIP MODULE | |
2 | CPV364M4K |
International Rectifier |
IGBT SIP MODULE | |
3 | CPV364M4KPBF |
International Rectifier |
IGBT SIP MODULE | |
4 | CPV364M4KPbF |
Vishay |
Fast IGBT | |
5 | CPV364M4U |
International Rectifier |
IGBT SIP MODULE | |
6 | CPV364M4UPbF |
Vishay |
Fast IGBT | |
7 | CPV364MF |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
8 | CPV364MK |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT | |
9 | CPV364MU |
International Rectifier |
IGBT SIP MODULE Ultra-Fast IGBT | |
10 | CPV362M4F |
International Rectifier |
IGBT SIP MODULE | |
11 | CPV362M4FPbF |
Vishay |
Fast IGBT | |
12 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE |