The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the.
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses TM
• HEXFRED soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve
Product Summary
7 13 Output Current in a Typical 5.0 kHz Motor Drive 18 ARMS per phase (4.6 kW total) with TC = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are mor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPV364M4FPbF |
Vishay |
Fast IGBT | |
2 | CPV364M4K |
International Rectifier |
IGBT SIP MODULE | |
3 | CPV364M4KPBF |
International Rectifier |
IGBT SIP MODULE | |
4 | CPV364M4KPbF |
Vishay |
Fast IGBT | |
5 | CPV364M4U |
International Rectifier |
IGBT SIP MODULE | |
6 | CPV364M4UPbF |
Vishay |
Fast IGBT | |
7 | CPV364MF |
International Rectifier |
IGBT SIP MODULE Fast IGBT | |
8 | CPV364MK |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT | |
9 | CPV364MU |
International Rectifier |
IGBT SIP MODULE Ultra-Fast IGBT | |
10 | CPV362M4F |
International Rectifier |
IGBT SIP MODULE | |
11 | CPV362M4FPbF |
Vishay |
Fast IGBT | |
12 | CPV362M4U |
International Rectifier |
UltraFast IGBT IGBT SIP MODULE |