Central www.DataSheet4U.com TM PROCESS CPQ130 Triac Semiconductor Corp. 12 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 130 MILS x 130 MILS 8.6 MILS ± 0.6 MILS 99 MILS x 49 MILS 34 MILS x 34 MILS Al - 45,000Å Al/Mo/Ni.
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPQ110 |
Central Semiconductor |
Triac 8.0 Amp | |
2 | CPQ150 |
Central Semiconductor Corporation |
16A 600V Triac Chip | |
3 | CPQ165 |
Central Semiconductor |
TRIAC 25 Amp | |
4 | CPQ166 |
centralsemi |
TRIAC | |
5 | CPQ057 |
Central Semiconductor |
TRIAC 2.0 Amp | |
6 | CPQ090 |
Central Semiconductor |
TRIAC 4.0 Amp | |
7 | CP-20K42 |
ETC |
CP-20K42 | |
8 | CP-20K42A |
LG |
Color TV Manual | |
9 | CP-4LB |
Sumida Corporation |
IFT Coils | |
10 | CP-H0114-C |
Coilcraft |
SMD Telecoil | |
11 | CP0002 |
Vishay |
Wirewound/Metal Oxide Resistors | |
12 | CP0003 |
Vishay |
Wirewound/Metal Oxide Resistors |