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www.DataSheet4U.com Ordering number : ENA0423 CPH6623 SANYO Semiconductors DATA SHEET CPH6623 Features • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power .
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P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Conditions Ratings --30 ±20 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6621 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 2 | CPH6622 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | CPH6602 |
Sanyo Semiconductor Corporation |
Ultrahigh-speed Switching |
|
| 4 | CPH6605 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 5 | CPH6612 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 6 | CPH6613 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 7 | CPH6614 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 8 | CPH6615 |
Sanyo Semicon Device |
General Purpose Switching Device Application |
|
| 9 | CPH6616 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | CPH6619 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 11 | CPH6635 |
ON Semiconductor |
Power MOSFET |
|
| 12 | CPH6636R |
ON Semiconductor |
N-Channel Power MOSFET |
|