www.DataSheet4U.com Ordering number : ENA0847 CPH6621 SANYO Semiconductors DATA SHEET CPH6621 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (.
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P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings --20 ±10 --1.5 --6.0 0.9 1.2 150 --55 to +150 Unit V V A A W W °C °C
Electric.
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---|---|---|---|---|
1 | CPH6622 |
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2 | CPH6623 |
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P-Channel Silicon MOSFET | |
3 | CPH6602 |
Sanyo Semiconductor Corporation |
Ultrahigh-speed Switching | |
4 | CPH6605 |
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N-Channel and P-Channel Silicon MOSFETs | |
5 | CPH6612 |
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6 | CPH6613 |
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7 | CPH6614 |
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N-Channel and P-Channel Silicon MOSFETs | |
8 | CPH6615 |
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9 | CPH6616 |
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10 | CPH6619 |
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11 | CPH6635 |
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12 | CPH6636R |
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