Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
www.DataSheet4U.com Ordering number : ENN8106 CPH6612 N-Channel Silicon MOSFET CPH6612 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25.
•
•
•
•
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions Ratings 20 ±12 2 8 0.8 150 --55 to +150 Unit V V A A W.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6613 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 2 | CPH6614 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 3 | CPH6615 |
Sanyo Semicon Device |
General Purpose Switching Device Application |
|
| 4 | CPH6616 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 5 | CPH6619 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 6 | CPH6602 |
Sanyo Semiconductor Corporation |
Ultrahigh-speed Switching |
|
| 7 | CPH6605 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 8 | CPH6621 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 9 | CPH6622 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | CPH6623 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 11 | CPH6635 |
ON Semiconductor |
Power MOSFET |
|
| 12 | CPH6636R |
ON Semiconductor |
N-Channel Power MOSFET |
|