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www.DataSheet4U.com Ordering number : ENN8182 CPH6613 CPH6613 Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with two MOSFETs contained in a single package facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=2.
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N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with two MOSFETs contained in a single package facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions Ratings 20 ±12 2.5 10 0.9 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6612 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 2 | CPH6614 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 3 | CPH6615 |
Sanyo Semicon Device |
General Purpose Switching Device Application |
|
| 4 | CPH6616 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 5 | CPH6619 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 6 | CPH6602 |
Sanyo Semiconductor Corporation |
Ultrahigh-speed Switching |
|
| 7 | CPH6605 |
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs |
|
| 8 | CPH6621 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 9 | CPH6622 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | CPH6623 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 11 | CPH6635 |
ON Semiconductor |
Power MOSFET |
|
| 12 | CPH6636R |
ON Semiconductor |
N-Channel Power MOSFET |
|