CMBTA43 - CDIL

CMBTA43 (CMBTA42 / CMBTA43) TRANSISTORS

Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATING.

Features

less otherwise specified) Limiting values Collector
  –base voltage (open emitter) VCBO Collector
  –emitter voltage (open base) VCEO Emitter
  –base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j
  –t + Rth t
  –s + Rth s
  –a) + Tamb Thermal resistance from junction to ambient max. 300 max. 300 max. max. max.
  –55 max. 200 V 200 V 6 V 500 mA 250 mW to +150 °C 150 °C Rth j
  –a = 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector
  –emitter b.