CMBTA05 - CDIL

CMBTA05 (CMBTA05 / CMBTA06) TRANSISTORS

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MA.

Features

pecified) Limiting values Collector
  –base voltage (open emitter) VCBO Collector
  –emitter voltage (open base) VCEO Emitter
  –base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j
  –t + Rth t
  –s + Rth s
  –a) + Tamb Thermal resistance from junction to ambient max. max. max. max. max. max. max. 60 60 80 V 80 V 4 V 500 mA 250 mW
  –55 to +150 °C 150 °C Rth j
  –a = 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) CMBT A05 Collector
  –emitter breakd.