CMBTA13 - Rectron Semiconductor

CMBTA13 NPN Small-Signal Darlington Transistors

www.datasheet4u.com CMBTA13 NPN Small-Signal Darlington Transistors Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) Absolute Maximum Ratings Collector-emmitter voltage (open base) VBE = 0 Collector current (d.c.) Total power dissipation up to Tamb = 25oC Junction Temperature D.C. current gain IC = 10mA; VCE = 5V Transition freq.

Features

ww.rectron.com 1 of 2 www.datasheet4u.com CMBTA13 Characteristics (at Ta=25 oC unless otherwise specified) Symbol Value Collector-emitter breakdown voltage V(BR)CES min 30 IC = 100 uA Emitter-base cut-off current IEBO max 0.1 VBE = 10 V Emitter-base cut-off current ICBO max 0.1 VCB = 10 V D.C. current gain IC = 10mA; VCE = 5V hFE min 5000 min 10000 IC = 100mA; VCE = 5V Collector-emitter saturation voltage VCEsat max 1.5 IC = 100mA; IB = 0.1 mA Base-emitter On voltage VBE(on) max 2 IC = 100mA; VCE = 5V Transition frequency at f = 100 MHZ fT min 125 IC = 10mA; VCE = 5V UNIT V uA uA V V MHZ.